WPM3407 single p-channel, -30 v, -4.4a,power mosfet order information absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds -30 v gate-source voltage v gs 20 continuous drain current (t j =150c) a t a =25c i d 4.4 3.7 a t a =70c 3.5 2.9 pulsed drain current i dm -20 maximum power dissipation a t a =25c p d 1.4 1.0 w t a =70c 0.9 0.6 operating junction and storage temperature range t j ,t stg -55to150 c description the WPM3407 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use in dc-dc conversion applications. standard product WPM3407 is pb-free. features application z power management in note book z portable equipment z battery powered system - z dc/dc converter z load switch v (br)dss r ds(on) typ ? 30 v 36 m @ ? 10 v 53 m @ ? 4.5 v part number package shipping WPM3407-3/tr sot23-3 3000tape&reel pin connections : sot 23-3 2 1 3 p ? channel w p7 = specific device code z = date code wp7z 1 2 3 gate source drain g s d top view 2 3 1 marking: - - - product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
a. surface mounted on fr4 board using 1 in sq pad size, 1oz cu. electrical characteristics (t j =25 c unless otherwise noted) thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient thermal resistance a t 10 s r ja 70 90 c/w steady state 90 125 junction-to-case thermal resistance steady state r jc 50 80 parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage bv dss v gs =0v,i d = -250 a -30 v zero gate voltage drain current i dss v ds gs =0v t j =25c -1 a t j =85c -10 gate-source leakage current i gss v ds =0v,v gs =20v 100 na gate threshold voltage v gs(th) v gs =v ds ,i d = -250 a -1.0 -2.0 -3.0 v drain-source on-resistance r ds(on) v gs = -10v, i d m ? v gs =-4.5,i d forward recovery voltage v sd v gs =0v,i s =-1.0a forward transconductance g fs v ds =-5.0v,i d =-5a 5 8 s dynamic input capacitance c iss v gs =0v,f=1.0mhz,v ds =-15v 700 950 1200 pf output capacitance c oss 90 120 150 reverse transfer capacitance c rss 75 100 125 total gate charge q g(tot) v gs =-10v,v ds =-15v,i d =5a 13 18 23 nc threshold gate charge q g(th) 1.5 2 2.5 gate- source charge q gs 22.53 gate- drain charge q gd 33.84.5 gate resistance r g v gs =0v,v ds =0v,f=1.0mhz 5 8 ? switching parameters turn-on delay time t d(on) v gs =-10v,v ds =-15v, i d =-4.3a, r g =6 ? 81115 ns rise time t r 469 turn-off delay time t d(off) 30 40 50 fall time t f 5 7.5 10 body diode reverse recovery time t rr i f =-5a, di/dt=100a/s 25 ns body diode reverse recovery charge q rr i f =-5a, di/dt=100a/s 14 nc - =24v,v =-3.0a 53 66 =-4.4a 36 46 -0.79 -1.5 -0.5 v WPM3407 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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